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Freescale Semiconductor Technical Data
Document Number: MRF7S21110H Rev. 1, 7/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 33 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 17.3 dB Drain Efficiency -- 32.5% Device Output Signal PAR -- 6.1 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 38 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 110 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 110 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S21110HR3 MRF7S21110HSR3
2110 - 2170 MHz, 33 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465- 06, STYLE 1 NI - 780 MRF7S21110HR3
CASE 465A - 06, STYLE 1 NI - 780S MRF7S21110HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS VDD Tstg TC TJ Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225 Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 109 W CW Case Temperature 78C, 33 W CW Symbol RJC Value (2,3) 0.37 0.41 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
MRF7S21110HR3 MRF7S21110HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1B (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 270 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 2.7 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Equivalent Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz) Crss Coss Ciss -- -- -- 7.95 613 232 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) 1.2 2 0.05 2 2.7 0.1 2.7 3.5 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 33 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. (continued) Gps D PAR ACPR IRL 16.5 31 5.7 - 48 -- 17.3 32.5 6.1 - 38 - 15 19.5 39 6.5 - 35 -- dB % dB dBc dB
MRF7S21110HR3 MRF7S21110HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Video Bandwidth @ 90 W PEP Pout where IM3 = - 30 dBc (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 33 W Avg. Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 110 W CW Average Group Delay @ Pout = 110 W CW, f = 2140 MHz Part - to - Part Insertion Phase Variation @ Pout = 110 W CW, f = 2140 MHz, Six Sigma Window Gain Variation over Temperature ( - 30C to +85C) Output Power Variation over Temperature ( - 30C to +85C) Symbol VBW -- 10 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 2110 - 2170 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.325 0.772 1.9 39.7 0.011 0.028
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S21110HR3 MRF7S21110HSR3 RF Device Data Freescale Semiconductor 3
R2 VBIAS + R1 C2 C3 C4 + C5 C6 Z6 Z5 Z7 RF INPUT Z8 Z9 Z11 C7 Z10 DUT Z12 RF OUTPUT C8 + C9 + C10 C11 + C12 C13 + C14 VSUPPLY
Z1 C1
Z2
Z3
Z4
Z1 Z2 Z3 Z4 Z5 Z6 Z7
1.280 x 0.084 Microstrip 0.856 x 0.084 Microstrip 0.240 x 0.280 Microstrip 0.420 x 0.880 Microstrip 0.950 x 0.0395 Microstrip 0.526 x 0.0940 Microstrip 0.480 x 1.050 Microstrip
Z8 Z9 Z10 Z11 Z12 PCB
0.370 x 0.201 Microstrip 0.386 x 0.084 Microstrip 0.196 x 0.242 Microstrip 0.105 x 0.084 Microstrip 1.267 x 0.084 Microstrip Arlon CuClad 250GX - 0300 - 55 - 22, 0.030, r = 2.55
Figure 1. MRF7S21110HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21110HR3(HSR3) Test Circuit Component Designations and Values
Part C1 C2 C3 C4, C13 C5 C6 C7 C8 C9, C10 C11 C12 C14 R1 R2 Description 15 pF, Chip Capacitor 47 F, 16 V Tantalum Capacitor 8.2 pF, Chip Capacitor 2.2 F, 50 V Chip Capacitors 1 F, 50 V Tantalum Capacitor 5.1 pF Chip Capacitor 16 pF Chip Capacitor 6.8 pF Chip Capacitor 22 F, 35 V Tantalum Capacitors 0.1 F Chip Capacitor 100 F, 50 V Electrolytic Capacitor 470 F, 63 V Electrolytic Capacitor 1 K, 1/4 W Chip Resistor 10 , 1/3 W Chip Resistor Part Number ATC100B150JT500XT T491D476K016AT ATC100B8R2CT500XT C1825C225J5RAC T491C105K050AT ATC100B5R1CT500XT ATC100B160JT500XT ATC100B6R8BT500XT T491X226K035AT C1206C104K5RAC MCR63V477M13X26 MCR50V107M8X11 CRCW12061001FKEA CRCW121010R0FKEA Manufacturer ATC Kemet ATC Kemet Kemet ATC ATC ATC Kemet Kemet Multicomp Multicomp Vishay Vishay
MRF7S21110HR3 MRF7S21110HSR3 4 RF Device Data Freescale Semiconductor
C5
R1
C8 R2 C6
C13
C14
C9 C10 C11 C12
C2
C3
C4
Figure 2. MRF7S21110HR3(HSR3) Test Circuit Component Layout
CUT OUT AREA
C1
C7
MRF7S21110HR3 MRF7S21110HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 17.6 17.4 17.2 Gps, POWER GAIN (dB) 17 16.8 D Gps 36 35 34 33 32 0 -0.5 -1 -1.5 -2 IRL 2080 2100 2120 2140 2160 2180 2200 -2.5 2220 PARC (dB)
VDD = 28 Vdc, Pout = 33 W (Avg.), IDQ = 1100 mA 16.6 Single-Carrier W-CDMA, 3.84 MHz Channel 16.4 Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 16.2 16 15.8 15.6 2060 PARC
0 -4 -8 -12 -16 -20
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 33 Watts Avg.
D, DRAIN EFFICIENCY (%) 16.6 16.4 Gps, POWER GAIN (dB) 16.2 16 15.8 VDD = 28 Vdc, Pout = 70 W (Avg.), IDQ = 1100 mA 15.6 Single-Carrier W-CDMA, 3.84 MHz Channel 15.4 Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 15.2 PARC 15 IRL 14.8 2060 2080 2100 2120 2140 2160 2180 f, FREQUENCY (MHz) D Gps 50 49 48 47 46 -2 PARC (dB) -2.5 -3 -3.5 2200 -4 2220 0 -4 -8 -12 -16
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 70 Watts Avg.
19 18 Gps, POWER GAIN (dB) 17 825 mA 16 15 14 13 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300 550 mA IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 1650 mA 1375 mA 1100 mA -10 VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20 IDQ = 550 mA 825 mA -40 1375 mA -50 350 mA 1100 mA
-30
VDD = 28 Vdc, f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing
-60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 300
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S21110HR3 MRF7S21110HSR3 6 RF Device Data Freescale Semiconductor
IRL, INPUT RETURN LOSS (dB)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 3rd Order -50 -60 -70 1 10 100 400 Pout, OUTPUT POWER (WATTS) PEP 5th Order 7th Order VDD = 28 Vdc, IDQ = 1100 mA f1 = 2135 MHz, f2 = 2145 MHz Two-Tone Measurements, 10 MHz Tone Spacing 0 -10 -20 -30 -40 -50 -60 1 10 TWO-TONE SPACING (MHz) 100 VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 1100 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz
IM3-L IM3-U IM5-U IM7-U IM7-L IM5-L
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 0 -1 -2 -1 dB = 31.27 W -3 -4 -5 20 40 60 -2 dB = 45.15 W -3 dB = 75 W
Figure 8. Intermodulation Distortion Products versus Tone Spacing
60 Ideal D, DRAIN EFFICIENCY (%) 55 50 45 40 35
Actual
VDD = 28 Vdc, IDQ = 1100 mA f = 2140 MHz, Input Signal PAR = 7.5 dB 80
30 100
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc)
0 -10 -20
Gps, POWER GAIN (dB)
17 25_C 16 15 14 13 12 D 1 10 Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1100 mA f = 2140 MHz 100 85_C
85_C 50 40 30 20 10 0 300
Uncorrected, Upper and Lower -30 -40 -50 -60 -70 36 DPD Corrected with Memory Correction 38 40 42 44 46 48 50 DPD Corrected No Memory Correction
Pout, OUTPUT POWER (dBm)
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S21110HR3 MRF7S21110HSR3 RF Device Data Freescale Semiconductor 7
D, DRAIN EFFICIENCY (%)
VDD = 28 Vdc, IDQ = 1100 mA, f = 2140 MHz, Single-Carrier W-CDMA, Input Signal PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth
19 -30_C 18 Gps TC = -30_C
70 25_C 60
TYPICAL CHARACTERISTICS
18 IDQ = 1100 mA f = 2140 MHz 17 Gps, POWER GAIN (dB) MTTF (HOURS) VDD = 24 V 13 0 40 80 120 160 200 Pout, OUTPUT POWER (WATTS) CW 28 V 32 V 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 33 W Avg., and D = 32.5%. MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 107 108
16
15
106
14
Figure 12. Power Gain versus Output Power
Figure 13. MTTF versus Junction Temperature
W - CDMA TEST SIGNAL
100 10 -30 PROBABILITY (%) 1 Input Signal 0.1 (dB) 0.01 0.001 0.0001 0 2 4 6 8 10 PEAK-TO-AVERAGE (dB) W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW -40 -10 -20 3.84 MHz Channel BW
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S21110HR3 MRF7S21110HSR3 8 RF Device Data Freescale Semiconductor
Zo = 10
f = 2220 MHz
Zload f = 2060 MHz
f = 2220 MHz Zsource f = 2060 MHz
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 33 W Avg. f MHz 2060 2080 2100 2120 2140 2160 2180 2200 2220 Zsource W 2.2 - j5.1 2.2 - j5.0 2.1 - j4.9 2.1 - j4.8 2.1 - j4.7 2.0 - j4.5 2.0 - j4.4 2.0 - j4.3 2.0 - j4.2 Zload W 2.3 - j4.0 2.2 - j3.9 2.1 - j3.8 2.1 - j3.7 2.0 - j3.5 2.0 - j3.4 2.0 - j3.3 1.8 - j3.1 1.8 - j3.0
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance
MRF7S21110HR3 MRF7S21110HSR3 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B G
1 2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3 (FLANGE)
B
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H
(LID)
M
TA
B
M
ccc
M
TA
M
B
M
S
M
(INSULATOR)
ccc C
TA
M
B
M
aaa
M
TA
M
B
M
F E A
(FLANGE)
A
T
SEATING PLANE
CASE 465 - 06 ISSUE G NI - 780 MRF7S21110HR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
(FLANGE)
B
2
2X
K
D bbb
M
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --- 0.040 --- 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --- 1.02 --- 0.76 0.127 REF 0.254 REF 0.381 REF
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F T
SEATING PLANE
E A
(FLANGE)
A
CASE 465A - 06 ISSUE H NI - 780S MRF7S21110HSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MRF7S21110HR3 MRF7S21110HSR3 10 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Sept. 2007 July 2008 * Initial Release of Data Sheet * Added Input Signal in front of PAR for consistency throughout data sheet p. 2, 6, 7, 8 * Corrected Table 4, Typical Performances, Output Power Variation over Temperature value from 0.276 to 0.028, p. 3 * Updated Fig. 14, CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal, to better represent production test signal, p. 8 Description
MRF7S21110HR3 MRF7S21110HSR3 RF Device Data Freescale Semiconductor 11
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MRF7S21110HR3 MRF7S21110HSR3
Rev. 12 1, 7/2008 Document Number: MRF7S21110H
RF Device Data Freescale Semiconductor

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